onsemi Dual N/P-Channel-Channel MOSFET, 2.2 A, 3 A, 20 V, 6-Pin SSOT-6 FDC6420C
onsemi Dual N/P-Channel-Channel MOSFET, 2.5V, Maximum Power Dissipation: 960 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -12 V, +12 V, Length: 3mm, Maximum Operating Temperature: +150 °C.2 A, 3 A, 20 V, 6-Pin SSOT-6 FDC6420C, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 106 mΩ, 190 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.