onsemi Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 NTJD1155LG
3 A, 8 V, 6-Pin SOT-363 NTJD1155LG, Channel Type: N, P, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 400 mW, Transistor Configuration: N+P Loadswitch, Maximum Gate Source Voltage: +8 V, Height: 1mm, Length: 2.onsemi Dual N/P-Channel-Channel MOSFET, 1.2mm, MPN: NTJD1155LT1G.