onsemi Dual N-Channel MOSFET, 4 A, 30 V, 8-Pin SOIC NTMD4N03G
onsemi Dual N-Channel MOSFET, 4 A, 30 V, 8-Pin SOIC NTMD4N03G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C, MPN: NTMD4N03R2G.