Nexperia N-Channel MOSFET, 100 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN2R6-40YS,115
7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 131 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm.Nexperia N-Channel MOSFET, 100 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN2R6-40YS,115, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.