Vishay P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 SI2301CDS-T1-GE3
04mm, Maximum Operating Temperature: +150 °C.4V, Maximum Power Dissipation: 860 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Length: 3.3 A, 20 V, 3-Pin SOT-23 SI2301CDS-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 112 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.Vishay P-Channel MOSFET, 2.