Infineon N-Channel MOSFET, 56 A, 120 V, 3-Pin I2PAK IPI147N12N3GAKSA1
2V.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.Infineon N-Channel MOSFET, 56 A, 120 V, 3-Pin I2PAK IPI147N12N3GAKSA1, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 14.