onsemi N-Channel MOSFET, 11.2 A, 100 V, 8-Pin SOIC FDS86140
2 A, 100 V, 8-Pin SOIC FDS86140, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm, Length: 4mm.