Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin TO-220AB IRFB3306PBF
Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin TO-220AB IRFB3306PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.