Infineon N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK SPB20N60C3ATMA1
Infineon N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK SPB20N60C3ATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 208 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.31mm, Maximum Operating Temperature: +150 °C.