Vishay N-Channel MOSFET, 33 A, 600 V, 3-Pin D2PAK SIHB33N60E-GE3
Vishay N-Channel MOSFET, 33 A, 600 V, 3-Pin D2PAK SIHB33N60E-GE3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 99 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 278 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 10.67mm, Maximum Operating Temperature: +150 °C.