Infineon N-Channel MOSFET, 9 A, 550 V, 3-Pin SOT-223 IPN50R650CEATMA1
5V, Minimum Gate Threshold Voltage: 2.Infineon N-Channel MOSFET, 9 A, 550 V, 3-Pin SOT-223 IPN50R650CEATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 650 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 5 W, Maximum Gate Source Voltage: -30 V, +30 V, Length: 6.7mm, Maximum Operating Temperature: +150 °C.