onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1
onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 162 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.87mm, Maximum Operating Temperature: +175 °C.8V, Maximum Power Dissipation: 348 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -15 V, +25 V, Length: 15.3V, Minimum Gate Threshold Voltage: 1.