IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P
IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 230 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 16.26mm, Maximum Operating Temperature: +150 °C.