Microchip N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-23 TN2106K1-G
8V.6V, Maximum Power Dissipation: 360 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Forward Diode Voltage: 1.Microchip N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-23 TN2106K1-G, Package Type: TO-236AB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.