Infineon N-Channel MOSFET, 88 A, 200 V, 3-Pin TO-220 IPP110N20N3GXKSA1
Infineon N-Channel MOSFET, 88 A, 200 V, 3-Pin TO-220 IPP110N20N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 11 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.45mm, MPN: IPP110N20N3 G.