Toshiba N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK TK55S10N1
5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 157 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 6.5mm, Maximum Operating Temperature: +175 °C.Toshiba N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK TK55S10N1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.