onsemi P-Channel MOSFET, 4 A, 20 V, 6-Pin SOT-23 FDC642P
4V, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Length: 3mm, Maximum Operating Temperature: +150 °C.onsemi P-Channel MOSFET, 4 A, 20 V, 6-Pin SOT-23 FDC642P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.