Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L
Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 88 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 6.5mm, Maximum Operating Temperature: +175 °C.