Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK IPI086N10N3GXKSA1
5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK IPI086N10N3GXKSA1, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 15.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.