ROHM Dual N/P-Channel MOSFET, 8.5 A, 60 V, 8-Pin HSOP8 HP8M31TB1
ROHM Dual N/P-Channel MOSFET, 8.5 A, 60 V, 8-Pin HSOP8 HP8M31TB1, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 73 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3 (N Channel) V, 3 (P Channel) V, Minimum Gate Threshold Voltage: 1 (N Channel) V, 1 (P Channel) V, Maximum Power Dissipation: 7 W, Maximum Gate Source Voltage: ±20 V, ±20 V, Length: 5mm, Maximum Operating Temperature: +150 °C.