ROHM N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-323 RUC002N05T116
2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.1mm, Maximum Operating Temperature: +150 °C.3V, Maximum Power Dissipation: 350 mW, Maximum Gate Source Voltage: -8 V, +8 V, Length: 3.ROHM N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-323 RUC002N05T116, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.