IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227 IXTN102N65X2
IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227 IXTN102N65X2, Package Type: SOT-227B, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.