Infineon N-Channel MOSFET, 2.9 A, 60 V, 3-Pin SOT-223 BSP320SH6327XTSA1
9 A, 60 V, 3-Pin SOT-223 BSP320SH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2.5mm, Maximum Operating Temperature: +150 °C.1V, Maximum Power Dissipation: 1.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.