onsemi Dual N/P-Channel-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 FDG6332C
3V, Maximum Power Dissipation: 300 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -12 V, +12 V, Length: 2mm, Maximum Operating Temperature: +150 °C.onsemi Dual N/P-Channel-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 FDG6332C, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 442 mΩ, 700 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.