Infineon N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK IPD60R380C6ATMA1
73mm, Maximum Operating Temperature: +150 °C.6 A, 650 V, 3-Pin DPAK IPD60R380C6ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.5V, Minimum Gate Threshold Voltage: 2.