Infineon N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 IPB010N06NATMA1
Infineon N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 IPB010N06NATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.5 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.31mm, Maximum Operating Temperature: +175 °C.