onsemi N-Channel MOSFET, 113 A, 30 V, 8-Pin PQFN8 FDMS7670AS
8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.05mm.2V, Maximum Power Dissipation: 65 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.onsemi N-Channel MOSFET, 113 A, 30 V, 8-Pin PQFN8 FDMS7670AS, Package Type: Power 56, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.