Infineon N-Channel MOSFET, 30 A, 75 V, 3-Pin DPAK IPD30N08S2L21ATMA1
1V, Maximum Power Dissipation: 136 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.Infineon N-Channel MOSFET, 30 A, 75 V, 3-Pin DPAK IPD30N08S2L21ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 26 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2.73mm, Maximum Operating Temperature: +175 °C.