Infineon N-Channel MOSFET, 3.2 A, 60 V, 4-Pin SOT-89 BSS606NH6327XTSA1
3V, Maximum Power Dissipation: 1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2 A, 60 V, 4-Pin SOT-89 BSS606NH6327XTSA1, Package Type: PG-SOT-89, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.