Vishay P-Channel MOSFET, 13.4 A, 20 V, 8-Pin SOIC SI4403CDY-T1-GE3
4 A, 20 V, 8-Pin SOIC SI4403CDY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.Vishay P-Channel MOSFET, 13.4V, Maximum Power Dissipation: 5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Length: 5mm, Maximum Operating Temperature: +150 °C.