Infineon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P4L04ATMA1
8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 137 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +5 V, Length: 6.Infineon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P4L04ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5mm, Maximum Operating Temperature: +175 °C.