onsemi P-Channel MOSFET, 6.7 A, 12 V, 3-Pin DPAK FDD306P
onsemi P-Channel MOSFET, 6.73mm, Maximum Operating Temperature: +175 °C.4V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Length: 6.7 A, 12 V, 3-Pin DPAK FDD306P, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.