IXYS N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXFH80N65X2
13mm, Maximum Operating Temperature: +150 °C.5V, Maximum Power Dissipation: 890 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Length: 16.IXYS N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXFH80N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3.