onsemi N-Channel MOSFET, 51 A, 100 V, 8-Pin PQFN8 FDMS86183
8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 63 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 5mm, Maximum Operating Temperature: +150 °C.onsemi N-Channel MOSFET, 51 A, 100 V, 8-Pin PQFN8 FDMS86183, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12.