Vishay SQ4920EY-T1_GE3 N-Kanal Dual, SMD MOSFET 30 V / 8 A 4,4 W, 8-Pin SOIC
Vishay SQ4920EY-T1_GE3 N-Kanal Dual, SMD MOSFET 30 V / 8 A 4,4 W, 8-Pin SOIC, Drain-Source-Widerstand max.: 17,5 mΩ, Channel-Modus: Enhancement, Gate-Schwellenspannung min.5V, Transistor-Konfiguration: Isoliert, Gate-Source Spannung max.