Infineon CoolMOS IPSA70R600P7SAKMA1 N-Kanal, THT MOSFET 700 V / 8,5 A, 3-Pin IPAK (TO-251)
Infineon CoolMOS IPSA70R600P7SAKMA1 N-Kanal, THT MOSFET 700 V / 8,5 A, 3-Pin IPAK (TO-251), Drain-Source-Widerstand max.: 0,6 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 3.5V, Transistor-Werkstoff: Silicon.