Toshiba TJ60S04M3L P-Kanal, SMD MOSFET 40 V / 60 A 90 W, 3-Pin DPAK (TO-252)
: -20 V, +10 V, Automobilstandard: AEC-Q101.Toshiba TJ60S04M3L P-Kanal, SMD MOSFET 40 V / 60 A 90 W, 3-Pin DPAK (TO-252), Drain-Source-Widerstand max.: 2V, Transistor-Konfiguration: Einfach, Gate-Source Spannung max.: 9,4 mΩ, Channel-Modus: Enhancement, Gate-Schwellenspannung max.