Infineon HEXFET IRF7317TRPBF N/P-Kanal Dual, SMD MOSFET 20 V / 5,3 A; 6,6 A 2 W, 8-Pin SOIC
5mm.: -12 V, +12 V, Höhe: 1.: 46 mΩ, 98 mΩ, Channel-Modus: Enhancement, Gate-Schwellenspannung max.Infineon HEXFET IRF7317TRPBF N/P-Kanal Dual, SMD MOSFET 20 V / 5,3 A; 6,6 A 2 W, 8-Pin SOIC, Channel-Typ: N, P, Drain-Source-Widerstand max.