Vishay TrenchFET SI3585CDV-T1-GE3 N/P-Kanal Dual, SMD MOSFET 20 V / 3,9 A, 2,1 A, 6-Pin TSOP-6
5V.: 0,058 O, 0,195 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max.Vishay TrenchFET SI3585CDV-T1-GE3 N/P-Kanal Dual, SMD MOSFET 20 V / 3,9 A, 2,1 A, 6-Pin TSOP-6, Channel-Typ: N, P, Drain-Source-Widerstand max.