Infineon N-Channel MOSFET, 24 A, 200 V, 3-Pin TO-220AB IRFB23N20DPBF
Infineon N-Channel MOSFET, 24 A, 200 V, 3-Pin TO-220AB IRFB23N20DPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 4.69mm.