ROHM N-Channel MOSFET, 15 A, 650 V, 3-Pin TO-220FM R6515ENX
ROHM N-Channel MOSFET, 15 A, 650 V, 3-Pin TO-220FM R6515ENX, Mounting Type: Through Hole, Maximum Drain Source Resistance: 310 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Length: 10.