Infineon N-Channel MOSFET, 100 A, 55 V, 3-Pin D2PAK IPB100N06S2L05ATMA1
2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.Infineon N-Channel MOSFET, 100 A, 55 V, 3-Pin D2PAK IPB100N06S2L05ATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.31mm, Maximum Operating Temperature: +175 °C.