Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S
Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 155 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.94mm, Maximum Operating Temperature: +150 °C.7V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 15.