Vishay N-Channel MOSFET, 9 A, 200 V, 3-Pin D2PAK SIHF630STRL-GE3
Vishay N-Channel MOSFET, 9 A, 200 V, 3-Pin D2PAK SIHF630STRL-GE3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 74 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.67mm, Maximum Operating Temperature: +150 °C.