ROHM Dual N/P-Channel MOSFET, 1.5 A, 20 V, 6-Pin TSMT-6 QS6M4TR
7V, Maximum Power Dissipation: 1.ROHM Dual N/P-Channel MOSFET, 1.5 A, 20 V, 6-Pin TSMT-6 QS6M4TR, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 430 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.25 W, Maximum Gate Source Voltage: ±12 V, Length: 3mm, Maximum Operating Temperature: +150 °C.