Infineon N-Channel MOSFET, 600 mA, 200 V, 6-Pin TSOP-6 IRF5801TRPBF
Infineon N-Channel MOSFET, 600 mA, 200 V, 6-Pin TSOP-6 IRF5801TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 3mm, Maximum Operating Temperature: +150 °C.2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.