IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3
IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.46mm, Length: 16.26mm.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.