Vishay P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 SIA449DJ-T1-GE3
6V, Maximum Power Dissipation: 19 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Length: 2.4 A, 30 V, 6-Pin SOT-363 SIA449DJ-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.