Toshiba N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S
2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 126 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.Toshiba N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8.16mm, Maximum Operating Temperature: +150 °C.