onsemi N-Channel MOSFET, 8.9 A, 80 V, 8-Pin SOIC FDS3572
onsemi N-Channel MOSFET, 8.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C.9 A, 80 V, 8-Pin SOIC FDS3572, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 2.